Semiconductor device having step gates and method for...

Details Semiconductor device having step gates and method for... Semiconductor device having step gates and method for...

2008-05-27

2008-05-27

Sefer, Ahmed (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C257SE27084, C257SE21218, C438S689000, C438S706000, C438S707000, C438S710000, C438S713000

Reexamination Certificate

active

07378703

ABSTRACT:
The semiconductor device includes a substrate including a first active region and a second active region having a greater height than that of the first active region. A gate pattern has a step structure, which is formed on a border region between the first active region and the second active region. The gate pattern extends from a predetermined portion of the first active region to a predecided portion of the second active region. Gate spacers are formed on both sidewalls of the gate pattern. A first cell junction is formed in the first active region at one gate spacer and connected to a storage node contact. A second cell junction is formed in the second active region at the other gate spacer and connected to a bit line contact.

REFERENCES:
patent: 5210056 (1993-05-01), Pong et al.
patent: 5843846 (1998-12-01), Nguyen et al.
patent: 6465831 (2002-10-01), Park et al.
patent: 2001-0017172 (2001-03-01), None
patent: 10-2006-0075424 (2006-07-01), None
patent: 10-2006-0076533 (2006-07-01), None
patent: 10-2006-0087875 (2006-08-01), None
patent: 10-2006-0087897 (2006-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having step gates and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having step gates and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having step gates and method for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2761868