Semiconductor device having stacked type capacitor

Details Semiconductor device having stacked type capacitor Semiconductor device having stacked type capacitor

1993-01-21

1994-08-16

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257307, 257308, H01L 2968

Patent

active

053389557

ABSTRACT:
A DRAM providing a capacitor capacity sufficient for maintaining stable storage of data even if elements are further reduced in size in accordance with high density integration of semiconductor devices is disclosed. The DRAM has its capacitor upper electrode formed of an upper layer and a lower layer, and its capacitor lower electrode formed to surround the lower layer of the capacitor upper layer, and the upper layer of the capacitor upper layer formed to cover the upper surface and both sides of the capacitor lower electrode. Thus, a capacitor capacity is tremendously increased as compared to a conventional one in the same plane area as the conventional one.

REFERENCES:
patent: 4754313 (1988-06-01), Takemae et al.
patent: 4907046 (1990-03-01), Ohji et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5126810 (1992-06-01), Gotou
patent: 5164337 (1992-11-01), Ogawa et al.
"Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb DRAM's" by Yoru Kaga et al., IEEE Tranactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 255-261.

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