Semiconductor device having stacked transistors

Details Semiconductor device having stacked transistors Semiconductor device having stacked transistors

2007-02-08

2010-06-22

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257SE21614, C257SE21575, C257SE27026

Reexamination Certificate

active

07741644

ABSTRACT:
A semiconductor device includes a first semiconductor layer, a first interlayer insulation layer, a second semiconductor layer, and a gate pattern. The first interlayer insulation layer covers the first semiconductor layer. The second semiconductor layer is formed on the first interlayer insulation layer and includes source regions, drain regions, and a channel region interposed between the source region and the drain region. The gate pattern includes a gate insulation layer on the channel region of the second semiconductor layer. At least one of the source regions and the drain regions includes an elevated layer having a top surface higher than that of the channel region.

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English language abstract of Korean Publication No. 10-0214558.

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