Semiconductor device having spacer formed on semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

Reexamination Certificate

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Details

C257SE25006, C257SE25013, C257SE25018, C257SE25021, C257SE25027, C257SE23085

Reexamination Certificate

active

07906854

ABSTRACT:
A semiconductor device includes a semiconductor chip, a supporting body that is disposed below the semiconductor chip and supports the semiconductor chip, a spacer that is fixed onto the first semiconductor chip, and a substrate that is located below the first semiconductor chip and electrically connected to the semiconductor chip with a wire. At least a part of the peripheral portion of the semiconductor chip is an overhang portion that projects more laterally than the peripheral portion of the supporting body. A covering portion that covers a part of the upper surface of the overhang portion is formed in the spacer. The wire is connected to a region in the upper surface of the overhang portion, the region being lateral to the outermost periphery of the covering portion of the spacer and not being covered with the covering portion of the spacer. A height of an apex of the wire from the upper surface of the first semiconductor chip as a reference, is greater than a height, from the reference, of at least a portion in the outermost periphery of the covering portion of the spacer, the portion having the wire arranged at its lateral side.

REFERENCES:
patent: 5323060 (1994-06-01), Fogal et al.
patent: 6943294 (2005-09-01), Kang et al.
patent: 7352068 (2008-04-01), Kuroda et al.
patent: 7605476 (2009-10-01), Gritti
patent: 7692295 (2010-04-01), Megahed
patent: 2005/0161791 (2005-07-01), Hortaleza
patent: 2005-209805 (2005-08-01), None

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