Semiconductor device having SOI substrate and fabrication method

Details Semiconductor device having SOI substrate and fabrication method Semiconductor device having SOI substrate and fabrication method

1995-06-07

1996-03-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257351, 257352, 257353, 257354, H01L 2701, H01L 2712, H01L 310392

Patent

active

054988934

ABSTRACT:
A semiconductor device includes a semiconductor layer which has a first surface, and a second surface which is comparatively lower than the first surface. The semiconductor device also has a first material layer formed over the second surface, which includes a first inorganic material which has a hardness exceeding that of the semiconductor layer. The semiconductor device also includes a second material layer which has a hardness less than that of the first material layer, and which is formed in a gap between a sidewall of the first material layer and a sidewall between the first and second surfaces. The first surface of the semiconductor layer is formed by lapping until the first surface of the semiconductor layer is impeded by the first material layer so that the first surface of the semiconductor layer is substantially flush with a top surface of the first material layer.

REFERENCES:
patent: 3859716 (1975-01-01), Tihanyi
patent: 4262299 (1981-04-01), Ham
patent: 4425700 (1984-01-01), Sasaki et al.
patent: 4933298 (1990-06-01), Hasegawa
patent: 5017998 (1991-05-01), Miura et al.
patent: 5034789 (1991-07-01), Black

Affiliated with

Also associated with

Rating

Semiconductor device having SOI substrate and fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having SOI substrate and fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having SOI substrate and fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2102477