Semiconductor device having SOI-MOSFET

Details Semiconductor device having SOI-MOSFET Semiconductor device having SOI-MOSFET

1997-12-29

2000-05-09

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, H01L 2701, H01L 2712, H01L 310392

Patent

active

060607505

ABSTRACT:
To suppress floating substrate in the thin SOI.MOSFET formed on the SOI substrate, the gate (electrode) has a two-layer structure and the upper gate thereof is in contact with the sides of the SOI layer (substrate).

REFERENCES:
patent: 3974515 (1976-08-01), Ipri et al.
patent: 4996574 (1991-02-01), Shirasaki
patent: 5115289 (1992-05-01), Hisamoto et al.
patent: 5381029 (1995-01-01), Eguchi et al.
F. Assaderaghi et al., "A Dynamic Threshold Voltage MOSFET (DTMOS) for Very Low Voltage Operation", IEEE Electron Device Letters, vol. 15, No. 12, Dec. 1994.

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