Semiconductor device having single-ended sensing amplifier

Details Semiconductor device having single-ended sensing amplifier Semiconductor device having single-ended sensing amplifier

2011-01-11

2011-01-11

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S205000, C365S194000

Reexamination Certificate

active

07869294

ABSTRACT:
A single-ended sense amplifier in a semiconductor storage device having a hierarchical bit line structure includes a first MOS transistor for amplifying a signal outputted from a memory cell to a bit line, a second MOS transistor for feeding the output of the first MOS transistor to a global bit line, and a global bit line voltage determination circuit; and at least the ON/OFF timing of the second MOS transistor or the read timing of a global sense amplifier that includes the global bit line voltage determination circuit is controlled by the output signal of a delay circuit that includes a replica of the first MOS transistor and a replica of the global bit line voltage determination circuit.

REFERENCES:
patent: 7486565 (2009-02-01), Edahiro
patent: 7782697 (2010-08-01), Terzioglu et al.
patent: 2007/0147128 (2007-06-01), Edahiro
patent: 2007-172779 (2007-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having single-ended sensing amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having single-ended sensing amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having single-ended sensing amplifier will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2708255