Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-10-01
2009-02-17
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000, C257S507000
Reexamination Certificate
active
07492009
ABSTRACT:
A semiconductor device capable of making an effective use of a support substrate as interconnect is proposed. The semiconductor device (chip4) of the present invention has a first Si substrate1as a support substrate and a second Si substrate3which is layered on a first insulating film layered on one main surface of the first Si substrate1. A diffusion layer2used as a support substrate interconnect is formed at least in a part of the surficial portion of the first Si substrate1on the side thereof in contact with the first SiO2film9.
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Nec Electronics Corporation
Soward Ida M
Sughrue & Mion, PLLC
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