Semiconductor device having silicide film formed in a part...

Details Semiconductor device having silicide film formed in a part... Semiconductor device having silicide film formed in a part...

2006-05-23

2006-05-23

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S197000

Reexamination Certificate

active

07049222

ABSTRACT:
A semiconductor device includes an element separating insulating film provided on a semiconductor substrate to separate an element region. A gate electrode is arranged above the element region. Source/drain regions are formed in the semiconductor substrate to sandwich a region below the gate electrode. A silicide film is provided on the source/drain regions, extending onto the element separating insulating film. A contact hole extends through the interlayer insulating film, which is provided on the element separating insulating film and the silicide film, and reaches the silicide film. Ends of the contact hole are positioned on the silicide film and on the element separating insulating film. The contact hole includes a trench portion whose one end contacts with the edge of the silicide film in the bottom of the contact hole and in an upper portion of the element separating insulating film. A wiring layer is arranged in the contact hole.

REFERENCES:
patent: 5545581 (1996-08-01), Armacost et al.
patent: 5989988 (1999-11-01), Iinuma et al.
patent: 6323103 (2001-11-01), Rengarajan et al.
patent: 6388296 (2002-05-01), Hsu
patent: 6395598 (2002-05-01), Hirai et al.
patent: 2001-189451 (2001-07-01), None

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