Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-08
2008-07-08
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S333000
Reexamination Certificate
active
10924808
ABSTRACT:
The capacitance between the gate electrode film and the drain layer of semiconductor device is reduced while keeping the resistance low, with the breakdown voltage of the gate insulating film also being maintained at a sufficient level. A trench10is formed with the bottom of the trench at a comparatively shallow position in an N-epitaxial layer18.The thickness of a bottom surface part16of a gate electrode film11is formed so as to be thicker than other parts of the gate electrode film11.Also, when a P type body layer19is formed, an interface between the P type body layer19and an N-epitaxial layer18is located at a deeper position than a bottom end of the gate electrode film11.
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Itoi Masato
Takemori Toshiyuki
Watanabe Yuji
Doan Theresa T
Lowe Hauptman & Ham & Berner, LLP
Shindengen Electric Manufacturing Co. Ltd.
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