Semiconductor device having sense amplifier including paired...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S295000, C257S296000, C257S298000, C257S303000, C257S306000, C257S310000

Reexamination Certificate

active

07030437

ABSTRACT:
A semiconductor device includes two sense amplifiers provided on a semiconductor substrate. Each of two sense amplifiers is formed of a pair of transistors. Two transistors are separated from each other by an element-isolating insulating portion provided on the semiconductor substrate. Therefore unlike the conventional, two transistors do not share the source region with each other, resulting in a semiconductor device with an improved sensitivity of a sense amplifier.

REFERENCES:
patent: 5175604 (1992-12-01), Nogami
patent: 6335898 (2002-01-01), Watanabe et al.
patent: 6566698 (2003-05-01), Nishihara et al.
patent: 56-134756 (1981-10-01), None
patent: 60-167360 (1985-08-01), None
patent: 61-206255 (1986-09-01), None
patent: 62-115861 (1987-05-01), None
patent: 63-291469 (1988-11-01), None
patent: 01-92991 (1989-04-01), None
patent: 05-198178 (1993-08-01), None
patent: 06-13574 (1994-01-01), None

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