Semiconductor device having semiconductor memory with sense...

Details Semiconductor device having semiconductor memory with sense... Semiconductor device having semiconductor memory with sense...

2005-05-24

2005-05-24

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S189090, C365S205000, C365S211000

Reexamination Certificate

active

06898104

ABSTRACT:
A semiconductor device comprises a memory cell array, bit line, /bit line complementary to the bit line, reference voltage generating circuit and sense amplifier. The bit line is connected to the memory cells and applied with a voltage read from each memory cell of the memory cell array. The /bit line is supplied with a reference voltage. The reference voltage generating circuit generates the reference voltage that has temperature dependence for compensating a change in the voltage, read to the bit line, due to temperature. The reference voltage generating circuit controls the reference voltage such that the reference voltage assumes a midpoint of trails of a signal value distribution indicative of “0” data and a signal value distribution indicative of “1” data. The sense amplifier compares the voltage, read to the bit line, with the reference voltage supplied to the /bit line, and amplifies the difference therebetween.

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Ryu Ogiwara, et al., A 0.5-μm. 3-V, 1T1C, FRAM with a Variable Reference Bit-Line Voltage Scheme using a Fatigue-Free Reference Capacitor, IEEE Journal of Solid-State Circuits, vol. 35, No. 4, Apr. 2000, pp. 545-551.

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