Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Die bond
Reexamination Certificate
2008-03-18
2008-03-18
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Die bond
C257S779000
Reexamination Certificate
active
07345369
ABSTRACT:
A semiconductor device includes: a base member; a solder layer; and a semiconductor chip disposed on the base member through the solder layer. The chip has an in-plane temperature distribution when the chip is operated. The chip has an allowable maximum temperature as a temperature limit of operation. The in-plane temperature distribution of the chip provides a temperature of the chip at each position of a surface of the chip. The temperature margin at each position is obtained by subtracting the temperature of the chip from the allowable maximum temperature. The solder layer has an allowable maximum diameter of a void at each position, the void being disposed in the solder layer. The allowable maximum diameter of the void at each position becomes larger as the temperature margin at the position becomes larger.
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Hirano Naohiko
Hirasawa Naoki
Mamitsu Kuniaki
Matsui Hirohito
Onimaru Sadahisa
Andujar Leonardo
Denso Corporation
Nippon Soken Inc
Posz Law Group , PLC
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