Semiconductor device having same conductive type MIS transistors

Details Semiconductor device having same conductive type MIS transistors Semiconductor device having same conductive type MIS transistors

1996-03-22

1997-12-02

Hudspeth, David R.

Electronic digital logic circuitry

Function of and, or, nand, nor, or not

Field-effect transistor

326 88, H03K 458

Patent

active

056940610

ABSTRACT:
A semiconductor device having at least first and second MIS transistors of a same P or N conductive type. The first MIS transistor has a first data terminal which receives a high potential Vdd, and the second MIS transistor has a first data terminal which receives a low potential GND lower than the high potential Vdd. An output terminal is coupled to second data terminals of the first and second MIS transistors. A first input terminal is connected to a gate of the first MIS transistor for supplying a non-inverted signal. A second input terminal is directly connected to a gate of one of the first and second MIS transistors for supplying an inverted signal having a reverse polarity to the non-inverted signal and which is synchronized with the non-inverted signal. An output voltage compensating circuit is connected between one of (i) the output terminal and the first input terminal and (ii) the output terminal and the second input terminal. The output voltage compensating circuit prevents the lower potential of an output signal from rising if the semiconductor device includes PMIS transistors, and prevents the higher potential of the output signal from falling if the semiconductor device includes NMIS transistors.

REFERENCES:
patent: 4562365 (1985-12-01), Redfield
patent: 4649300 (1987-03-01), Schutz
patent: 4725746 (1988-02-01), Segawa et al.
patent: 4914323 (1990-04-01), Shibata et al.
patent: 5327026 (1994-07-01), Hardee et al.

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