Semiconductor device having reduced thermal interface...

Details Semiconductor device having reduced thermal interface... Semiconductor device having reduced thermal interface...

2011-03-15

2011-03-15

Zarneke, David A (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257SE23106

Reexamination Certificate

active

07906845

ABSTRACT:
A semiconductor device has a substrate having a top and bottom surface and a plurality of metal layers. A first die is electrically coupled to the top surface of the substrate. A lid member is attached to a top surface of the die and to the top surface of the substrate. A layering is formed on portions of a top surface of the lid member. The layering will have a different coefficient of thermal expansion (CTE) than the lid member.

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