Semiconductor device having reduced overlap capacitance and meth

Details Semiconductor device having reduced overlap capacitance and meth Semiconductor device having reduced overlap capacitance and meth

1997-01-08

1998-09-08

Tsai, Jey

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438585, H01L 21265, H01L 213205, H01L 214763

Patent

active

058044965

ABSTRACT:
A semiconductor device and process for manufacture thereof is disclosed in which a gate electrode with reduced overlap capacitance is formed by forming a gate electrode on a surface of a semiconductor and doping edge portions of the gate electrode with a first doping which effectively reduces the conductivity of the edge portions of the gate electrode. The conductivity of the gate electrode may be reduced at the edge portions by doping the edge portions with a dopant which inhibits the doping of the gate electrode or with a dopant which has a different conductivity type than the gate electrode dopant.

REFERENCES:
patent: 4682407 (1987-07-01), Wilson et al.
patent: 4714519 (1987-12-01), Pfiester et al.
patent: 4745079 (1988-05-01), Pfiester
patent: 5360751 (1994-11-01), Lee
patent: 5438007 (1995-08-01), Vinal et al.
patent: 5516707 (1996-05-01), Loh et al.

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