Semiconductor device having reduced leakage current

Details Semiconductor device having reduced leakage current Semiconductor device having reduced leakage current

1993-02-19

1999-04-13

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, H01L 2701

Patent

active

058941517

ABSTRACT:
An insulated gate semiconductor device comprising an insulator substrate having provided thereon a source and a drain region; a channel region being incorporated between said source and said drain regions, said channel region comprising a polycrystalline, a single crystal, or semi-amorphous semiconductor material; and a region provided under said channel region, said region comprising an amorphous material containing the same material as that of the channel region as the principal component, or said region comprising a material having a band gap larger than said channel region. A process for fabricating the device is also disclosed.

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