Semiconductor device having recrystallized source/drain regions

Details Semiconductor device having recrystallized source/drain regions Semiconductor device having recrystallized source/drain regions

1997-05-19

1999-11-16

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257 75, 257347, H01L 2904, H01L 2943

Patent

active

059863110

ABSTRACT:
A gate oxide film is formed on a thin-film SOI substrate or on a single crystalline silicon substrate and a gate is formed on the gate oxide film. The surfaces of a single crystalline silicon at diffusion layer regions on opposite sides of the gate are cleaned and an amorphous silicon film is formed thereon and on the side walls of the gate. Impurity ions are implanted in the amorphous silicon film, which is then converted into recrystallized silicon films by annealing. An interlayer insulator film is formed and another annealing is conducted. As a result, impurity ions in the recrystallized silicon films diffuse into the diffusion layer region of the single crystalline silicon and are activated to form a source and a drain.

REFERENCES:
patent: 4826782 (1989-05-01), Sachitano et al.
patent: 5729039 (1998-03-01), Beyer et al.
patent: 5736770 (1998-04-01), Asai et al.
patent: 5780896 (1998-07-01), Ono
C. Carter et al.; Appl. Phys. Lett. vol. 44 No. 4; pp. 459-461, Feb. 15, 1994.

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