Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2010-11-16
2011-11-29
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S510000, C257SE21545, C438S270000, C438S296000
Reexamination Certificate
active
08067799
ABSTRACT:
A semiconductor device having a recess channel structure includes a semiconductor substrate having a recess formed in a gate forming area in an active area; an insulation layer formed in the semiconductor substrate so as to define the active area and formed so as to apply a tensile stress in a channel width direction; a stressor formed in a surface of the insulation layer and formed so as to apply a compressive stress in a channel height direction; a gate formed over the recess in the active area; and source/drain areas formed in a surface of the active area at both side of the gate.
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Goto et al., “High Performance 35 nm Gate CMOSFETs with Vertical Scaling and Total Stress Control for 65 nm Technology,” 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 49-50.
Hynix / Semiconductor Inc.
Kilpatrick Townsend & Stockton LLP
Taylor Earl
Vu David
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