Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2006-11-14
2006-11-14
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Signals
C365S203000, C365S230030, C365S233100
Reexamination Certificate
active
07136312
ABSTRACT:
In a semiconductor device that needs a refresh operation for storing data, data of memory cells selected in response to a row address is read to main amplifiers through bit line pairs, sense amplifiers and data line pairs in a page-mode read operation. Thereafter, while outputting the data held in the main amplifiers to the outside, connecting transistors are turned off so as to disconnect the main amplifiers from the memory cells, and thus, the memory cells can be precharged. Also, in a page-mode write operation, while writing externally supplied input data in the main amplifiers, the memory cells can be precharged.
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Fujimoto Tomonori
Kikukawa Hirohito
Ohta Kiyoto
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Nguyen Van-Thu
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