Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-24
1999-01-05
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257357, H01L 2362
Patent
active
058566945
ABSTRACT:
A semiconductor device of the present invention includes an integrated circuit formed on a first conduction-type semiconductor substrate, an output buffer circuit for outputting a signal obtained from the integrated circuit, a protection circuit for protecting the output buffer circuit and a voltage supply circuit for supplying a voltage to the semiconductor substrate. The output buffer circuit has buffer MOSFETs. The protection circuit has protection elements for preventing electrostatic breakdown of the buffer MOSFETs. Impurity diffusion layers of the buffer MOSFETs are separated from impurity diffusion layers of the protection elements and a field oxide film is therebetween at predetermined intervals. Owing to such a construction, the electrostatic breakdown of each buffer MOSFET can be prevented from occurring.
REFERENCES:
patent: 5060037 (1991-10-01), Rountree
patent: 5290724 (1994-03-01), Leach
patent: 5495118 (1996-02-01), Kinoshita et al.
"Improvement of `Soft Breakdown` Leakage of off-State nMOSFETs Induced by HBM ESD Events Using Drain Engineering for LLD Structure", by Ikuo Kurachi and Yasuhiro Fukuda, in IEICE Transactions, vol. E77-A, No. 1, Jan. 1994, pp. 166-173.
Loke Steven H.
OKI Electric Industry Co., Ltd.
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