Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-08-24
1998-04-14
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257357, H01L 2362
Patent
active
057395713
ABSTRACT:
A semiconductor device of the present invention includes an integrated circuit formed on a first conduction-type semiconductor substrate, an output buffer circuit for outputting a signal obtained from the integrated circuit, a protection circuit for protecting the output buffer circuit and a voltage supply circuit for supplying a voltage to the semiconductor substrate. The output buffer circuit has buffer MOSFETs. The protection circuit has protection elements for preventing electrostatic breakdown of the buffer MOSFETs. Impurity diffusion layers of the buffer MOSFETs are separated from impurity diffusion layers of the protection elements and a field oxide film is disposed therebetween at predetermined intervals. Owing to such a construction, the electrostatic breakdown of each buffer MOSFET can be prevented from occurring.
REFERENCES:
patent: 5060037 (1991-10-01), Rountree
patent: 5290724 (1994-03-01), Leach
patent: 5495118 (1996-02-01), Kinoshita et al.
"Improvement of `Soft Breakdown` Leakage of off-State nMOSFETs Induced by HBM ESD Events Using Drain Engineering for LDD Structure", by Ikuo Kurachi and Yasuhiro Fukuda, in IEICE Transactions, vol. E77-A, No. 1, Jan. 1994, pp. 166-173.
Loke Steven H.
OKI Electric Industry Co., Ltd.
LandOfFree
Semiconductor device having protection device for preventing the does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having protection device for preventing the, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having protection device for preventing the will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-637749