Semiconductor device having polysilicon resistor with low temper

Details Semiconductor device having polysilicon resistor with low temper Semiconductor device having polysilicon resistor with low temper

1995-06-07

1996-09-10

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257538, 257359, 257363, 257516, 257904, H01L 2702

Patent

active

055548733

ABSTRACT:
A semiconductor device having a p type polysilicon resistor (56) with a moderate sheet resistance and low temperature coefficient of resistance is formed by a double-level polysilicon process. The process also produces n and p-channel transistors (44, 50), a capacitor having upper and lower n type polysilicon capacitor plates (36, 26), an n type polysilicon resistor (32) having a high sheet resistance, and an n type resistor (34) having a low sheet resistance. The p type doping used to form the source/drain regions (48) of p-channel transistor (50) counterdopes n type second level polysilicon to form p type polysilicon resistor (56) without effecting capacitor plates (36, 26) or the n type resistors (32, 34).

REFERENCES:
patent: 4208781 (1980-06-01), Rao et al.
patent: 4209716 (1980-06-01), Raymond, Jr.
patent: 4370798 (1983-02-01), Lien et al.
patent: 4377819 (1983-03-01), Sakai et al.
patent: 4391650 (1983-07-01), Pfeifer et al.
patent: 4416049 (1983-11-01), McElroy
patent: 4419812 (1983-12-01), Topich
patent: 4467519 (1984-08-01), Glang et al.
patent: 4577390 (1986-03-01), Haken
patent: 4579600 (1986-04-01), Shah et al.
patent: 4679170 (1987-07-01), Bourassa et al.
patent: 5187559 (1993-02-01), Isobe et al.
patent: 5196233 (1993-03-01), Chan et al.
patent: 5198382 (1993-03-01), Campbell et al.
patent: 5218225 (1993-06-01), Zanders
patent: 5273924 (1993-12-01), Chan et al.
patent: 5313087 (1994-05-01), Chan et al.
patent: 5352923 (1994-10-01), Boyd et al.
patent: 5365099 (1994-11-01), Phipps et al.
patent: 5448103 (1995-09-01), de Witt

Affiliated with

Also associated with

Rating

Semiconductor device having polysilicon resistor with low temper does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having polysilicon resistor with low temper, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having polysilicon resistor with low temper will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1322813