Semiconductor device having plural chips with the sides of the c

Details Semiconductor device having plural chips with the sides of the c Semiconductor device having plural chips with the sides of the c

1995-05-24

1999-06-01

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

257619, 257620, 257622, 257628, H01L 2904

Patent

active

059090529

ABSTRACT:
Prevention of reduction in the production yield due to the increase in the area of a semiconductor chip permits a sophisticated-performance single-chip semiconductor device to be fabricated. This also permits a many-kind small-amount production of semiconductor devices to be implemented. After plural semiconductor chips 2 and 3 are fabricated separately, only defect-free chips of them are selected. The selected defect-free chips are connected in contact between their side walls of their densest faces of atoms of their substrates so that the surfaces 4a and 4b where elements are to be formed are located in the same plane. Thus, even when the chip area is increased, reduction of the production yield can be prevented, thereby permitting a large-area sophisticated-performance single chip semiconductor device to be fabricated. If many kinds of semiconductor chips are prepared and connected in their combination in a variety of forms, it is possible to realize a many-kind small-amount production of semiconductor devices.

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