Semiconductor device having piezo resistance

Details Semiconductor device having piezo resistance Semiconductor device having piezo resistance

1992-10-31

1995-11-28

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257467, 257418, 257419, 73727, H01L 2984, H01L 4104, H01L 4108

Patent

active

054710863

ABSTRACT:
Disclosed herein a semiconductor pressure sensor, which is capable of carrying out temperature compensation in high accuracy, having a piezo resistance layer consisting of a single crystal layer formed by lateral seeding. In this semiconductor pressure sensor, a piezo resistance is so formed as to contain no crystal sub-grain boundary. Thus prevented is inconvenience of reduction in resistance temperature coefficient, which is caused when the piezo resistance contains the crystal sub-grain boundary. Thus, the piezo resistance can be set at a high resistance temperature coefficient, whereby a semiconductor pressure sensor capable of carrying out temperature compensation in high accuracy is obtained.

REFERENCES:
patent: 4672354 (1987-06-01), Kurtz et al.
patent: 4706100 (1987-11-01), Tufte
patent: 4814856 (1989-03-01), Kurtz et al.
patent: 4822752 (1989-04-01), Sugahara et al.
patent: 4975390 (1990-12-01), Fujii et al.
patent: 5177661 (1993-01-01), Zavracky et al.
patent: 5336918 (1994-08-01), Ipposhi et al.

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