Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2004-09-30
2009-02-24
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S458000, C257S459000, C257SE27132, C257SE27133
Reexamination Certificate
active
07495272
ABSTRACT:
The area occupied by a photo-sensor element may be reduced and multiple elements may be integrated in a limited area so that the sensor element can have higher output and smaller size. Higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. A sensor element that can resist bending stress can be obtained.
REFERENCES:
patent: 4085411 (1978-04-01), Genesi
patent: 4454416 (1984-06-01), Gontowski, Jr. et al.
patent: 4485301 (1984-11-01), Gontowski, Jr. et al.
patent: 5420452 (1995-05-01), Tran et al.
patent: 5481118 (1996-01-01), Tew
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5744822 (1998-04-01), Takayama et al.
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5811328 (1998-09-01), Zhang et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 5841180 (1998-11-01), Kobayashi et al.
patent: 5936231 (1999-08-01), Michiyama et al.
patent: 5955726 (1999-09-01), Takashima et al.
patent: 6002157 (1999-12-01), Kozuka
patent: 6087648 (2000-07-01), Zhang et al.
patent: 6118502 (2000-09-01), Yamazaki et al.
patent: 6124155 (2000-09-01), Zhang et al.
patent: 6166399 (2000-12-01), Zhang et al.
patent: 6194740 (2001-02-01), Zhang et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6204519 (2001-03-01), Yamazaki et al.
patent: 6236063 (2001-05-01), Yamazaki et al.
patent: 6243155 (2001-06-01), Zhang et al.
patent: 6274861 (2001-08-01), Zhang et al.
patent: 6287888 (2001-09-01), Sakakura et al.
patent: 6335213 (2002-01-01), Zhang et al.
patent: 6350981 (2002-02-01), Uno
patent: 6376333 (2002-04-01), Yamazaki et al.
patent: 6399933 (2002-06-01), Zhang et al.
patent: 6424326 (2002-07-01), Yamazaki et al.
patent: 6462806 (2002-10-01), Zhang et al.
patent: 6496240 (2002-12-01), Zhang et al.
patent: 6531711 (2003-03-01), Sakakura et al.
patent: 6583439 (2003-06-01), Yamazaki et al.
patent: 6680764 (2004-01-01), Zhang et al.
patent: 6734907 (2004-05-01), Hagihara et al.
patent: 6747638 (2004-06-01), Yamazaki et al.
patent: 6784411 (2004-08-01), Zhang et al.
patent: 6809718 (2004-10-01), Wei et al.
patent: 6814832 (2004-11-01), Utsunomiya
patent: 6822211 (2004-11-01), Hagihara
patent: 6828951 (2004-12-01), Yamazaki et al.
patent: 6858898 (2005-02-01), Hayakawa et al.
patent: 6864950 (2005-03-01), Zhang et al.
patent: 6867752 (2005-03-01), Yamazaki et al.
patent: 6891391 (2005-05-01), Hiroki
patent: 6930326 (2005-08-01), Kato et al.
patent: 6937306 (2005-08-01), Zhang et al.
patent: 6982406 (2006-01-01), Chen
patent: 6995753 (2006-02-01), Yamazaki et al.
patent: 6998282 (2006-02-01), Yamazaki et al.
patent: 7030551 (2006-04-01), Yamazaki et al.
patent: 7046282 (2006-05-01), Zhang et al.
patent: 7050138 (2006-05-01), Yamazaki et al.
patent: 7173279 (2007-02-01), Yamazaki et al.
patent: 7286173 (2007-10-01), Zhang et al.
patent: 2001/0030704 (2001-10-01), Kimura
patent: 2001/0038065 (2001-11-01), Kimura
patent: 2002/0011978 (2002-01-01), Yamazaki et al.
patent: 2002/0012057 (2002-01-01), Kimura
patent: 2002/0042171 (2002-04-01), Zhang et al.
patent: 2002/0044208 (2002-04-01), Yamazaki et al.
patent: 2002/0074551 (2002-06-01), Kimura
patent: 2002/0127785 (2002-09-01), Zhang et al.
patent: 2002/0130322 (2002-09-01), Zhang et al.
patent: 2003/0032210 (2003-02-01), Takayama et al.
patent: 2003/0032213 (2003-02-01), Yonezawa et al.
patent: 2003/0071953 (2003-04-01), Yamazaki et al.
patent: 2003/0134048 (2003-07-01), Shiotsuka et al.
patent: 2003/0166336 (2003-09-01), Kato et al.
patent: 2003/0201450 (2003-10-01), Yamazaki et al.
patent: 2003/0217805 (2003-11-01), Takayama et al.
patent: 2004/0079941 (2004-04-01), Yamazaki et al.
patent: 2004/0121602 (2004-06-01), Maruyama et al.
patent: 2004/0217357 (2004-11-01), Zhang et al.
patent: 2004/0263712 (2004-12-01), Yamazaki et al.
patent: 2005/0029518 (2005-02-01), Kato et al.
patent: 2005/0052584 (2005-03-01), Yamazaki et al.
patent: 2005/0056842 (2005-03-01), Nishi et al.
patent: 2005/0070038 (2005-03-01), Yamazaki et al.
patent: 2005/0082463 (2005-04-01), Koyama et al.
patent: 2005/0161675 (2005-07-01), Kimura
patent: 2005/0162421 (2005-07-01), Yamazaki et al.
patent: 2005/0162578 (2005-07-01), Yamazaki et al.
patent: 2005/0195129 (2005-09-01), Yamazaki et al.
patent: 2005/0202609 (2005-09-01), Zhang et al.
patent: 2005/0206830 (2005-09-01), Zhang et al.
patent: 2006/0082568 (2006-04-01), Yamazaki et al.
patent: 2007/0114532 (2007-05-01), Yamazaki et al.
patent: 2007/0126904 (2007-06-01), Kimura
patent: 2007/0267665 (2007-11-01), Koyama et al.
patent: 6-45354 (1994-02-01), None
patent: 06-275808 (1994-09-01), None
patent: 07-086607 (1995-03-01), None
patent: 08-064795 (1996-03-01), None
patent: 08-250745 (1996-09-01), None
patent: 08-264796 (1996-10-01), None
patent: 08-288522 (1996-11-01), None
patent: 11-243209 (1999-09-01), None
patent: 2001-320547 (2001-11-01), None
patent: 2002-062856 (2002-02-01), None
patent: 2002-176162 (2002-06-01), None
patent: 3329512 (2002-09-01), None
patent: 2002-305297 (2002-10-01), None
patent: 2003-047017 (2003-02-01), None
patent: 2003-060744 (2003-02-01), None
patent: 2003-174153 (2003-06-01), None
“A visible light sensor and an amplifier circuit Succeeded in forming them within the size of 2×1.5mm on a plastic chip”;Denpa Shinbunwith full translation; Oct. 2, 2003.
“Developing a thin and high output visible light sensor using a plastic substrate”;TDK homepage; with full translation; Oct. 1, 2003.
“Amorphous Silicon Semiconductor Optical Sensors for Brightness Adjustment Control of the Lighting Systems, etc., BCS series”;TDK homepagewith full translation; Jun. 2002.
“Thin and high output visible light sensor”;Kagaku Kougyou Shinbunwith full translation; Oct. 2, 2003.
“Bring about high output and downsizing”;The Nikkan Kogyo Shinbun, Ltd. with full translation; Oct. 2, 2003.
Office Action (Chinese Patent Application No. 200410083451.2) mailed May 9, 2008 (with English translation).
Koyama Jun
Maruyama Junya
Matsuzaki Takanori
Morisue Masafumi
Nishi Kazuo
Fish & Richardson P.C.
Semiconductor Energy Labortaory Co., Ltd.
Tran Minh-Loan T
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