Semiconductor device having peripheral circuit formed of TFT (th

Details Semiconductor device having peripheral circuit formed of TFT (th Semiconductor device having peripheral circuit formed of TFT (th

1992-04-17

1995-09-26

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

365 72, 365174, 365182, 257296, 257377, H01L 2978

Patent

active

054539528

ABSTRACT:
A semiconductor device having an increased integration density. The semiconductor device includes a memory cell array, and a peripheral circuit region formed over the memory cell array and to be in electrical connection to the memory cell array for controlling the input/output of the data signals. A large part of a semiconductor chip area can therefore be used for the memory cell array, thereby increasing the integration density of the semiconductor device.

REFERENCES:
patent: 5146425 (1992-09-01), Kang et al.
patent: 5153685 (1992-10-01), Murata et al.
patent: 5202849 (1993-04-01), Nozaki
"A Memory Cell with Polycrystalline Thin Film Transistor (TFT) for a 4Mbit SRAM", Electronic Information Communication Association, vol. 90, No. 48, pp. 7-13.

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