Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2008-06-23
2011-10-25
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S565000, C257SE29034
Reexamination Certificate
active
08044488
ABSTRACT:
The invention is based upon a semiconductor device where a high voltage bipolar transistor is manufactured on the same wafer with a high-speed bipolar transistor, and has a characteristic that the high-speed bipolar transistor and the high voltage bipolar transistor are formed on each epitaxial collector layer having the same thickness and are provided with a buried collector region formed in the same process and having the same impurity profile, the buried collector region exists immediately under a base of the high-speed bipolar transistor, no buried collector region and no SIC region exist immediately under a base of the high voltage bipolar transistor and distance between a base region and a collector plug region of the high voltage bipolar transistor is equal to or is longer than the similar distance of the high-speed bipolar transistor.
REFERENCES:
patent: 5976921 (1999-11-01), Maeda
patent: 2002/0036326 (2002-03-01), DeJong et al.
patent: 2004/0048428 (2004-03-01), Tanomura
patent: 11-008315 (1999-01-01), None
patent: 2004-363267 (2004-12-01), None
patent: 2006-054261 (2006-02-01), None
Arai Mitsuru
Hosoe Hideyuki
Wada Shinichiro
Brundidge & Stanger, P.C.
Diaz José R
Hitachi , Ltd.
Hitachi Ulsi Systems Co., Ltd.
Parker Kenneth
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