Semiconductor device having pad structure for preventing and...

Details Semiconductor device having pad structure for preventing and... Semiconductor device having pad structure for preventing and...

2007-09-18

2007-09-18

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S459000, C257SE23020, C257SE21122, C438S183000

Reexamination Certificate

active

10879840

ABSTRACT:
The present invention discloses a semiconductor device having a pad structure for preventing a stress of a silicon nitride film. The semiconductor device includes a semiconductor substrate, a lower structure formed on the semiconductor substrate, a first insulation film formed on the lower structure, a first metal layer coupled to the lower structure through a first metal contact in the first insulation film, a second metal layer formed on the first metal layer, and a plurality of dummy gates having a concentric square structure formed at the lower portion of the pad region on the second metal layer.

REFERENCES:
patent: 5998249 (1999-12-01), Liaw et al.
patent: 6150689 (2000-11-01), Narui et al.
patent: 6384464 (2002-05-01), Shin
patent: 6731007 (2004-05-01), Saito et al.
patent: 2001/0045651 (2001-11-01), Saito et al.
patent: 2003/0148625 (2003-08-01), Ho et al.
patent: 1020020058235 (2002-07-01), None
patent: 1020030025061 (2003-03-01), None

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