Semiconductor device having P channel high voltage transistors w

Details Semiconductor device having P channel high voltage transistors w Semiconductor device having P channel high voltage transistors w

1994-07-08

1995-09-05

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257509, 257345, H01L 2906, H01L 2704

Patent

active

054481015

ABSTRACT:
The present invention is primarily directed to obtaining a P channel high voltage transistor with an improved breakdown voltage. A first N type well region is provided in a main surface of a P type semiconductor substrate. A first field oxide film is provided in the main surface of the first N type well region. A P type source region and a P type drain region are provided on the opposite sides of the first field oxide film in the main surface of the first N type well region. A P type impurity injection region is provided immediately under the field oxide film so as to be connected to the P type drain region. A gate electrode is provided between the P type source region and the P type drain region on the first N type well region. An N.sup.+ ion injection region is provided between the P type source region and a channel in the N type well region. The first N type well region located under the P type drain region has its N type impurity concentration uniform at any depth.

REFERENCES:
patent: 4965221 (1990-10-01), Dennison et al.
patent: 5164806 (1992-11-01), Nagatomo et al.

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