Semiconductor device having oxygen-doped silicon layer so as to

Details Semiconductor device having oxygen-doped silicon layer so as to Semiconductor device having oxygen-doped silicon layer so as to

1997-03-06

1999-09-14

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257740, 257767, 257611, H01L 2943, H01L 2348, H01L 29167

Patent

active

059527218

ABSTRACT:
A phosphorous doped amorphous silicon storage node electrode is treated with heat so as to be converted into a phosphorous doped polysilicon storage electrode, and the heat causes the phosphorous to be diffused into a shallow n-type source region of an n-channel enhancement type switching transistor; to protect the shallow n-type source region from the phosphorous, a phosphorous/oxygen doped amorphous silicon layer is formed between the shallow n-type source region and the phosphorous-doped amorphous silicon storage node electrode, and the oxygen decelerates the phosphorous diffused therethrough, thereby decreasing the amount of phosphorous diffused into the n-type shallow source region.

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Yoshida Masakatsu et al., "Manufacture of Semiconductor Device", Patent Abstracts of Japan, Pub. No. 59016346, Pub. Date Jan. 27, 1984, Application Date Jul. 19, 1982, Application No. 57126418.
Daspet et al., "Structural and Technological Properties of Heavily In Situ Phosphorus-Doped low Pressure Chemically Vapour Deposited Silicon Films", Thin Solid Films, 175, pp. 43-38, 1989.

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