Semiconductor device having high resistive element including hig

Details Semiconductor device having high resistive element including hig Semiconductor device having high resistive element including hig

1997-03-28

1999-09-14

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257756, 257536, H01L 2348, H01L 2352, H01L 2940

Patent

active

059527226

ABSTRACT:
The semiconductor device has a substrate 101 having a first portion and a second portion, a field insulating film 102 formed on first portion of the substrate, a gate insulating film 103 formed on second portion of the substrate, a first conductive layer 104 selectively formed on the field insulating film and the gate insulating film, a first insulating 108 layer formed on the field insulating film, the gate insulating film, and first conductive layer, a hole 109 formed in first insulating layer exposing a surface of first conductive layer, a second conductive layer 110 selectively formed on a whole surface of the hole and first insulating film, and a high melting point metal selectively formed on second conductive layer.

REFERENCES:
patent: 5323049 (1994-06-01), Motonami

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