Semiconductor device having overlapped storage electrodes

Details Semiconductor device having overlapped storage electrodes Semiconductor device having overlapped storage electrodes

1995-06-07

1997-05-13

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257298, 257307, 257308, 257309, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

056295405

ABSTRACT:
The capacitor area is increased with a cylinder-shaped first storage electrode overlapped with a second electrode in an area which covers two adjacent cells. Included in a semiconductor device using the invention may be: a semiconductor substrate; a word line on the substrate; impurity regions at opposite sides of the word line in the substrate; a first contact hole on an odd impurity region; a first storage electrode connected to the first contact hole, which is overlapped with an adjacent even cell; a first sidewall storage electrode at opposite sides of the first storage electrode; a second contact hole on the even impurity region, the second contact hole having an insulated sidewall; a second storage electrode connected to the second contact hole, which is overlapped with an adjacent odd cell; a second sidewall storage electrode at opposite sides of the second storage electrode.

REFERENCES:
patent: 5089869 (1992-02-01), Matsuo et al.
patent: 5103275 (1992-04-01), Miura et al.
patent: 5135883 (1992-08-01), Bae et al.
patent: 5434439 (1995-07-01), Ajika et al.

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