Semiconductor device having non-silicide region in which no...

Details Semiconductor device having non-silicide region in which no... Semiconductor device having non-silicide region in which no...

2011-08-09

2011-08-09

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S344000, C257S371000, C257SE27016

Reexamination Certificate

active

07994584

ABSTRACT:
A semiconductor device includes first and second MOSFETs corresponding to at least first power source voltage and second power source voltage lower than the first power source voltage, and non-silicide regions formed in drain portions of the first and second MOSFETs and having no silicide formed therein. The first MOSFET includes first diffusion layers formed in source/drain portions, a second diffusion layer formed below a gate portion and formed shallower than the first diffusion layer and a third diffusion layer formed with the same depth as the second diffusion layer in the non-silicide region, and the second MOSFET includes fourth diffusion layers formed in source/drain portions, a fifth diffusion layer formed below a gate portion and formed shallower than the fourth diffusion layer and a sixth diffusion layer formed shallower than the fourth diffusion layer and deeper than the fifth diffusion layer in the non-silicide region.

REFERENCES:
patent: 7372108 (2008-05-01), Iinuma
patent: 2006-339444 (2006-12-01), None

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