Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2006-12-05
2006-12-05
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S133000, C438S514000
Reexamination Certificate
active
07144797
ABSTRACT:
A semiconductor device includes a graded junction termination extension. A method for fabricating the device includes providing a semiconductor layer having a pn junction, providing a mask layer adjacent to the semiconductor layer, etching the mask layer to form at least two laterally adjacent steps associated with different mask thicknesses and substantially planar step surfaces, and implanting a dopant species through the mask layer into a portion of the semiconductor layer adjacent to the termination of the pn junction. The semiconductor layer is annealed to activate at least a portion of the implanted dopant species to form the graded junction termination extension.
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Balachandran Santhosh
Chow Tat-Sing Paul
Losee Peter
Lebentritt Michael
Lee Cheung
Rensselaer Polytechnic Institute
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