Semiconductor device having multiple-zone junction...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant

Reexamination Certificate

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C438S133000, C438S514000

Reexamination Certificate

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07144797

ABSTRACT:
A semiconductor device includes a graded junction termination extension. A method for fabricating the device includes providing a semiconductor layer having a pn junction, providing a mask layer adjacent to the semiconductor layer, etching the mask layer to form at least two laterally adjacent steps associated with different mask thicknesses and substantially planar step surfaces, and implanting a dopant species through the mask layer into a portion of the semiconductor layer adjacent to the termination of the pn junction. The semiconductor layer is annealed to activate at least a portion of the implanted dopant species to form the graded junction termination extension.

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