Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2009-07-13
2010-06-29
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S626000, C438S634000, C438S637000, C257SE21582, C257SE21585, C257SE21621, C257SE21641, C257SE21675
Reexamination Certificate
active
07745326
ABSTRACT:
A method of producing a semiconductor device having a plurality of wiring layers forms a first interlayer-insulating film, forms a plurality of grooves for wiring in the first interlayer-insulating film, fills metallic films in the grooves to form wirings, etches the first interlayer-insulating film with the wirings as a mask and removes the interlayer-insulating film between the wirings to provide grooves to be filled, and fills a second interlayer-insulating film made of a material of low dielectric constant in the grooves to be filled.
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Miyajima Hideshi
Shibata Hideki
Shimooka Yoshiaki
Tomioka Kazuhiro
Ahmadi Mohsen
Garber Charles D
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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