Semiconductor device having multiple fin heights

Details Semiconductor device having multiple fin heights Semiconductor device having multiple fin heights

2011-03-08

2011-03-08

Ngo, Ngan (Department: 2893)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S445000, C257SE21035

Reexamination Certificate

active

07902035

ABSTRACT:
A semiconductor device having multiple fin heights is provided. Multiple fin heights are provided by using multiple masks to recess a dielectric layer within a trench formed in a substrate. In another embodiment, an implant mold or e-beam lithography are utilized to form a pattern of trenches in a photoresist material. Subsequent etching steps form corresponding trenches in the underlying substrate. In yet another embodiment, multiple masking layers are used to etch trenches of different heights separately. A dielectric region may be formed along the bottom of the trenches to isolate the fins by performing an ion implant and a subsequent anneal.

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