Semiconductor device having multi-layered wiring structure

Details Semiconductor device having multi-layered wiring structure Semiconductor device having multi-layered wiring structure

1990-04-13

1991-11-05

Hille, Rolf

357 68, 357 75, A01L 2348, H01L 2352

Patent

active

050634330

ABSTRACT:
A semiconductor device comprises a first pad region applied with a first potential, a first line led from the first pad region and connected to a first circuit, a second pad region integrated with the first pad region and applied also with the first potential, and a second line led from the second pad region connected to a second circuit and overlapped with the first line.

REFERENCES:
patent: 4626889 (1986-12-01), Yamamoto et al.
patent: 4628343 (1986-12-01), Komatsu
patent: 4684973 (1987-08-01), Takano et al.
patent: 4825280 (1989-04-01), Cheh et al.
patent: 4833521 (1989-05-01), Early
patent: 4908690 (1990-03-01), Hata et al.
patent: 4924293 (1990-05-01), Saito et al.
patent: 4970572 (1990-11-01), Kano et al.

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