Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2005-10-18
2005-10-18
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S295000, C257S310000
Reexamination Certificate
active
06956279
ABSTRACT:
The present invention relates to the field of a semiconductor device having a ferroelectric material capacitor and method of making the same. The semiconductor device includes a capacitor having a triple-level oxygen barrier layer pattern formed by an oxygen barrier metal layer, a material layer formed of a conductive solid solution by compounding the oxygen barrier metal layer and oxygen, and an oxygen barrier metal on an interlayer dielectric with a contact plug. The capacitor also has an electrode and a ferroelectric film electrically contacting to the oxygen barrier layer. Further, a wetting layer is formed between the oxygen barrier layer and the contact plug, and an iridium oxygen layer is formed between the oxygen barrier layer and a capacitor electrode.
REFERENCES:
patent: 6190963 (2001-02-01), Zhang et al.
patent: 6313539 (2001-11-01), Yokoyama et al.
patent: 1998-173138 (1998-06-01), None
patent: 1998-242408 (1998-11-01), None
English language abstract of Japanese Patent No. 1998-242408.
English language abstract of Japanese Patent No. 1998-173138.
Marger & Johnson & McCollom, P.C.
Pizarro-Crespo Marcos D.
Samsung Electronics Co,. Ltd.
Weiss Howard
LandOfFree
Semiconductor device having multi-layer oxygen barrier pattern does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having multi-layer oxygen barrier pattern, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having multi-layer oxygen barrier pattern will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3484275