Semiconductor device having multi-layer oxygen barrier pattern

Details Semiconductor device having multi-layer oxygen barrier pattern Semiconductor device having multi-layer oxygen barrier pattern

2005-10-18

2005-10-18

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S295000, C257S310000

Reexamination Certificate

active

06956279

ABSTRACT:
The present invention relates to the field of a semiconductor device having a ferroelectric material capacitor and method of making the same. The semiconductor device includes a capacitor having a triple-level oxygen barrier layer pattern formed by an oxygen barrier metal layer, a material layer formed of a conductive solid solution by compounding the oxygen barrier metal layer and oxygen, and an oxygen barrier metal on an interlayer dielectric with a contact plug. The capacitor also has an electrode and a ferroelectric film electrically contacting to the oxygen barrier layer. Further, a wetting layer is formed between the oxygen barrier layer and the contact plug, and an iridium oxygen layer is formed between the oxygen barrier layer and a capacitor electrode.

REFERENCES:
patent: 6190963 (2001-02-01), Zhang et al.
patent: 6313539 (2001-11-01), Yokoyama et al.
patent: 1998-173138 (1998-06-01), None
patent: 1998-242408 (1998-11-01), None
English language abstract of Japanese Patent No. 1998-242408.
English language abstract of Japanese Patent No. 1998-173138.

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