Semiconductor device having MOS varactor and methods for...

Details Semiconductor device having MOS varactor and methods for... Semiconductor device having MOS varactor and methods for...

2007-11-16

2009-11-03

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

C438S238000, C257SE21351, C257SE21378

Reexamination Certificate

active

07611956

ABSTRACT:
A semiconductor device with having a MOS varactor and methods of fabricating the same are disclosed. The MOS varactor includes a metal gate electrode, an active semiconductor plate interposed between the metal gate electrode and the semiconductor substrate, and a capacitor dielectric layer interposed between the metal gate electrode and the active semiconductor plate. Further, a lower insulating layer insulates the MOS varactor from the semiconductor substrate. According to the present invention, a metal gate electrode is used to reduce poly depletion, thereby increasing a tuning range of the varactor, and to manufacture a reliable metal resistor without the need of an additional photomask.

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