Semiconductor device having MOS source follower circuit

Details Semiconductor device having MOS source follower circuit Semiconductor device having MOS source follower circuit

1992-11-12

1995-01-17

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257373, 257392, 257393, H01L 2702

Patent

active

053828194

ABSTRACT:
A semiconductor device having a source follower circuit is configurated in such a way that a first and a second p-type wells are formed by diffusing a p-type impurity into an n-type semiconductor substrate doped with an n-type impurity of a low density. Next, on the first well, a driver transistor of the source follower circuit and then, on the second well, a load transistor of the source follower circuit are formed. The first well and a source of the driver transistor are then connected to each other.

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