Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-06-28
2010-02-09
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23150, C438S132000, C438S281000
Reexamination Certificate
active
07659601
ABSTRACT:
A semiconductor device having a moisture-proof dam and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating layer provided on a substrate having a fuse region. A fuse guard dam is provided on the interlayer insulating layer to surround the fuse region. A cover insulating layer is provided on the interlayer insulating layer to cover the fuse guard dam and have a fuse window exposing a middle part of the fuse region, and at least two upper extension dams are provided in the cover insulating layer to sequentially surround the fuse region and be connected to the fuse guard dam.
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Notice of Office Action, corresponding to Korean Patent Application No. 10-2006-0102536, issued by the Korean Patent Office on Sep. 27, 2007.
Lee Won-Chul
Park Ji-Suk
Fahmy Wael
Ingham John C
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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