Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-10
2011-05-10
Pham, Hoai V (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S382000, C257S384000, C257SE27060
Reexamination Certificate
active
07939891
ABSTRACT:
A semiconductor device includes a dielectric film and gate electrode that are stacked on a substrate, sidewalls formed to cover the side surfaces of the electrode and dielectric film, and SiGe films formed to sandwich the sidewalls, electrode and dielectric film, filled in portions separated from the sidewalls, having upper portions higher than the surface of the substrate and having silicide layers formed on regions of exposed from the substrate. The lower portion of the SiGe film that faces the electrode is formed to extend in a direction perpendicular to the surface of the substrate and the upper portion is inclined and separated farther apart from the gate electrode as the upper portion is separated away from the surface of the substrate. The surface of the silicide layer of the SiGe film that faces the gate electrode is higher than the channel region.
REFERENCES:
patent: 2007/0200170 (2007-08-01), Yamasaki et al.
patent: 2008/0061370 (2008-03-01), Matsuo
patent: 2008/0237732 (2008-10-01), Mori et al.
patent: 2006-186240 (2006-07-01), None
Matsuo Kouji
Shinyama Takashi
Yahashi Katsunori
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Pham Hoai v
Sony Corporation
Ullah Elias
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