Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-10
2007-04-10
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21425
Reexamination Certificate
active
11132373
ABSTRACT:
The performance and reliability of a semiconductor device are improved. In a semiconductor device having a CMISFET, a gate electrode of an n channel MISFET is composed of a nickel silicide film formed by reacting a silicon film doped with P, As, or Sb with an Ni film, and a gate electrode of a p channel MISFET is composed of a nickel-silicon-germanium film formed by reacting a nondope silicon germanium film with the Ni film. The work function of the gate electrode of the n channel MISFET is controlled by doping P, As, or Sb, and the work function of the gate electrode of the p channel MISFET is controlled by adjusting the Ge concentration.
REFERENCES:
patent: 6599831 (2003-07-01), Maszara et al.
patent: 2001/0023116 (2001-09-01), Wurzer et al.
patent: 2002/0130393 (2002-09-01), Takayanagi et al.
patent: 2003/0203609 (2003-10-01), Maszara et al.
patent: 2000-252462 (1999-03-01), None
patent: 2002-319670 (2001-04-01), None
patent: 2003-347425 (2003-04-01), None
patent: 2005-191545 (2004-11-01), None
Office Action from the Japanese Patent Office dated Apr. 18, 2006 (in Japanese).
Kadoshima Masaru
Nabatame Toshihide
A. Marquez, Esq. Juan Carlos
Dickey Thomas L.
Fisher Esq. Stanley P.
Reed Smith LLP
Renesas Technology Corporation
LandOfFree
Semiconductor device having misfet gate electrodes with and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having misfet gate electrodes with and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having misfet gate electrodes with and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3745763