Semiconductor device having metal silicide film on impurity diff

Details Semiconductor device having metal silicide film on impurity diff Semiconductor device having metal silicide film on impurity diff

1995-12-27

1997-07-15

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257409, 257377, 257412, 257413, 257607, 257914, H01L 29167, H01L 29207, H01L 29227

Patent

active

056486731

ABSTRACT:
A semiconductor device and a method of fabricating such a semiconductor device in which a silicon nitride film constituting a protective film for ion implantation is used for improving the device structure in order that conversion of a metal film into a silicide for reducing the resistance of a shallow-junction diffused layer may not be prevented by the knock-on phenomenon of oxygen, thereby reduce the fabrication cost. A silicon nitride film, which is used as a protective film for ion implantation into a substrate and a gate polysilicon, is processed into side walls of the gate polysilicon thereby to omit the step of forming side walls by a silicon oxide film. Further, in the case where boron is diffused into the gate polysilicon, boron diffusion is suppressed by nitrogen knock-on, thereby preventing boron from going through the gate oxide film.

REFERENCES:
patent: 5091763 (1992-02-01), Sanchez
patent: 5103272 (1992-04-01), Nishiyama
patent: 5268590 (1993-12-01), Pfiester et al.
patent: 5508212 (1996-04-01), Wang et al.
patent: 5514902 (1996-05-01), Kawasaki et al.

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