Semiconductor device having memory cells implemented with...

Static information storage and retrieval – Systems using particular element – Semiconductive

Reexamination Certificate

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C365S175000, C365S174000, C365S096000, C365S104000, C365S105000, C365S156000, C365S230030, C365S225700, C341S144000, C341S121000, C341S120000

Reexamination Certificate

active

11409963

ABSTRACT:
A DAC having a memory mat including a plurality of first memory cells, and a plurality of output lines connected to the plurality of first memory cells. Each of the plurality of memory cells has a first memory portion including bipolar transistors and storing information in non-volatility based on whether a junction of the bipolar transistors is destroyed or not, and a second memory portion connected to the first memory portion and for outputting information to corresponding one of the plurality of output lines. The DAC has a first mode in which information is transferred from the first memory portions to the second memory portions when the information is written into the second memory portions, and a second mode in which the second memory portions are specified externally and information is written into the second memory portions.

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