Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2004-07-27
2008-10-14
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C326S030000
Reexamination Certificate
active
07436717
ABSTRACT:
A semiconductor device comprises a memory cell block and a sense amplifier zone. A selection gate included in the sense amplifier zone is turned on for selectively coupling the memory cell block with the sense amplifier zone. Local drivers are dispersively arranged on a BLI wire transmitting a gate control signal, and a driver is arranged on an end of the BLI wire. The driver pulls down the potential of the BLI wire at a high speed.
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“Ultra LSI Memory,” by Kiyoo Ito, Baifukan, 1994, pp. 161-163 (with partial English translation).
“Semicondutor Memories”, Betty Prince, 1983, Wiley, 2ndedition pp. 162-163.
McDermott Will & Emery LLP
Renesas Technology Corp.
Tran Michael T
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