Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Smoot, Stephen W (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S334000, C257S577000, C257S586000, C257SE27022, C257SE27079, C438S237000, C438S328000
Reexamination Certificate
active
07989885
ABSTRACT:
A semiconductor device has a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type complementary to the first conductivity type arranged in or on the first semiconductor layer. The semiconductor device has a region of the first conductivity type arranged in the second semiconductor layer. A first electrode contacts the region of the first conductivity type and the second semiconductor layer. A trench extends into the first semiconductor layer, and a voltage dependent short circuit diverter structure has a highly-doped diverter region of the second conductivity type. This diverter region is arranged via an end of a channel region and coupled to a diode arranged in the trench.
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Constapel et al., Trench-IGBTs with Integrated Diverter Structures, International Symposium on Power Semiconductor Devices and ICs, 1995, pp. 201-206.
Hirler Franz
Pfirsch Frank Dieter
Dicke, Billig & Czaja P.L.L.C.
Infineon Technologies Austria AG
Smoot Stephen W
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