Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-25
2005-10-25
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S382000, C257S387000
Reexamination Certificate
active
06958500
ABSTRACT:
A dummy gate crossing an active area having ends in contact with an isolation area is formed. A low area lower than a dummy gate is formed in the isolation area. Side walls are formed in the active area except the dummy gate. A semiconductor film having the same height as that of the dummy gate is formed in the low area. An oxide film is formed on the semiconductor film. The dummy gate is removed by the oxide film as a mask. The oxide film is removed by the semiconductor film as a stopper.
REFERENCES:
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 6274421 (2001-08-01), Hsu et al.
patent: 6346438 (2002-02-01), Yagishita et al.
patent: 6445050 (2002-09-01), Chediak et al.
patent: 6515338 (2003-02-01), Inumiya et al.
patent: 6853028 (2005-02-01), Kim et al.
Dang Phuc T.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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