Semiconductor device having low interface state density and...

Details Semiconductor device having low interface state density and... Semiconductor device having low interface state density and...

2005-09-27

2005-09-27

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S406000

Reexamination Certificate

active

06949805

ABSTRACT:
The semiconductor device comprises an intermediate layer formed on a semiconductor substrate6, the intermediate layer12being formed of an oxide containing a first element which is either of a III group element and a V group element, an insulation film formed on the intermediate layer, the insulation film being formed of an oxide of a second element which is the other of the III group element and the V group element, and an electrode16formed on the insulation film. Because the intermediate layer of the oxide containing the first element is formed, even when the gate insulation film is formed of Al2O3or others, the interface state density can be depressed to be low. Thus, the semiconductor device can have low interface state density and small flat band voltage shift even when Al2O3, etc. is used as a material of the insulation film.

REFERENCES:
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6200891 (2001-03-01), Jagannathan et al.
patent: 6844604 (2005-01-01), Lee et al.
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2004/0084736 (2004-05-01), Harada

Affiliated with

Also associated with

Rating

Semiconductor device having low interface state density and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having low interface state density and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having low interface state density and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3413958